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Semiconductor
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I-Line Photoresist
Bump Photoresist
KrF Photoresist
TSV Thick Photoresist
BARC
TARC
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Etchant
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Rinsing Solution
Spin On Carbon Hardmask
CMP
Wafering
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64
贴文
标题
内容
名称
AYCKP-9160
-Target : Thickness 6.0um (Res. 5.0um, Contact Hole)
-Purpose of use : KrF Positive TSV Devices
YSO-800
YSO-800은 웨이퍼 절삭 공정에서 사용되는 유성 절삭유체이며, 냉각기능 및 윤활성, 극압성, 그리고 방청성이 우수하고 SiC 슬러리의 적절한 점도유지 및 압축침강 방지효과에 탁월한 효과가 있다.
YMCA-M128
Word-line(Mo/TiN) recess wet-etch solution.
YMCA-W096
Word-line(W/TiN) recess wet-etch solution.
YS-210
-Target : Thickness 0.21um
-Purpose of use : Normal SOC "
YCHS-130, YCHE-3731, YCHE-4359. YCHE-20
YCHS-130, YCHE-3731, YCHE-4359. YCHE-20 is High etch resistance.
YHS-80,YHS-140,YHS-330,YHS-330A,AYCHS-2819
YHS-80,YHS-140,YHS-330,YHS-330A,AYCHS-2819 is Spin on Hot-temperature carbon Hardmask.
YCHS-4359
-Target : Thickness 0.59um
-Purpose of use : CIS device"
YCHE-3731
-Target : Thickness 0.31um
-Purpose of use : Mertal layer"
AYCHS-2819
-Target : Thickness 0.19um
-Purpose of use : CIS device"
YHS-140
-Target : Thickness 0.13um
-Purpose of use : Mertal layer"
YPCC-2000
Contamonation remove and corrosion control after the CMP process.
YSC-100
Hard-mask post etch residue cleaning solution.
YCLW-S804
Tunable selective polishing slurry for the tungsten/oxide layer and minimum dishing.
YCHT-S902
High selective polishing slurry for bulk tungsten remove and minimum erosion.
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