본문바로가기
닫기
公司简介
致辞
蓝图
沿革
技术研究所
组织图
合作公司及主要客户
来访之路
事业领域
半导体
显示器
环保能源
一般
产品简介
半导体
显示器
环保能源
一般
投资信息
公告
公告信息
客服中心
公告事项
资料室
客户咨询
LANGUAGE
KO
EN
CN
Semiconductor
All
I-Line Photoresist
Bump Photoresist
KrF Photoresist
TSV Thick Photoresist
BARC
TARC
Developer
Etchant
Promoter
Rinsing Solution
Spin On Carbon Hardmask
CMP
Wafering
全部
64
贴文
标题
内容
名称
YA-400
(Bottom Anti Refective Coating Materials)
-Target : Thickness 0.04um
-Purpose of use : ArF BARC
YCB-240
(Bottom Anti Refective Coating Materials)
-Target : Thickness 0.024um
-Purpose of use : TSV package BARC – Ball grid array bumping process
YPP-T6K
(Positive PR TSV)
-Target : Thickness 6.0um (Res. 6.0um, Contact Hole)
-Purpose of use : i-Line Positive TSV Devices
YCKN-2954
(Negative PR for 248nm process)
-Target : Thickness 0.54um (Res. 180nm, 250nm)
-Purpose of use : Implant & Etch Layer
YCKN-4530
(Negative PR for 248nm process)
-Target : Thickness 0.30um (Res. 180nm)
-Purpose of use : Implant Layer
YKN-510
(Negative PR for 248nm process)
-Target : Thickness 0.54um (Res. 180nm, 250nm)
-Purpose of use : Implant & Etch Layer
YCKP-1654
(Positive PR for 248nm process)
-Target : Thickness 0.54um (Res. 180nm, 250nm)
-Purpose of use : Implant & Etch Layer
YKP-503
(Positive PR for 248nm process)
-Target : Thickness 0.54um (Res. 180nm, 250nm)
-Purpose of use : Implant & Etch Layer
YBNP-S500
(Negative type Bump Photoresist)
-Target : Thickness 50um (Res. 75um, Contact Hole)
-Purpose of use : Negative Bump Photoresist
YPP-6000
(Positive type Bump Photoresist)
-Target : Thickness 6.0um (Res. 5um, L/S 1:1)
-Purpose of use : Positive Bump Photoresist
YCIP-4000E
(Positive PR for 365nm process)
-Target : Thickness 3.5um (Res. 1.5um & 3.0um, 1:1)
-Purpose of use : Implant & Metal Layer
YCIP-1700
(Positive PR for 365nm process)
-Target : Thickness 1.7um (Res. 500nm, 1:1)
-Purpose of use : Implant & Etch Layer / OLED Devices
YCIP-1300
(Positive PR for 365nm process)
-Target : Thickness 1.3um (Res. 500nm, 1:1)
-Purpose of use : Implant & Etch Layer / OLED Devices
YCIP-1100
(Positive PR for 365nm process)
-Target : Thickness 1.1um (Res. 500nm, 1:1)
-Purpose of use : Implant & Etch Layer / OLED Devices
YCIN-2000/YCIN-6000
(Negative PR for 365nm process)
-Target : Thickness 2.0um ~ 6.0um (Bulk Pattern)
-Purpose of use : Implant & Etch Layer / OLED Devices
1
2
3
4
5
