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Semiconductor
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I-Line Photoresist
Bump Photoresist
KrF Photoresist
TSV Thick Photoresist
BARC
TARC
Developer
Etchant
Promoter
Rinsing Solution
Spin On Carbon Hardmask
CMP
Wafering
A Total of
8
hit(s)
Subject
Contents
Name
Spin On Carbon Hardmask
반도체 소자의 패턴 크기가 감소함에 따라 70nm 이하의 패턴을 구현하면서 기존의 Photoresist를 이용하여 두께를 감소시킬 경우, Etch 공정에서 Photoresist가 붕괴할 가능성이 존재합니다.
이를 개선하기 위하여 SOC polymer를 활용하며, SOC polymer 층 위에 Photoresist를 사용하여 Etch 공정 시 요구하는 깊이 만큼 패턴을 새기더라도 Photoresist가 붕괴하지 않도록 지지체로 활용 가능합니다.
YS-210
-Target : Thickness 0.21um
-Purpose of use : Normal SOC "
YCHS-130, YCHE-3731, YCHE-4359. YCHE-20
YCHS-130, YCHE-3731, YCHE-4359. YCHE-20 is High etch resistance.
YHS-80,YHS-140,YHS-330,YHS-330A,AYCHS-2819
YHS-80,YHS-140,YHS-330,YHS-330A,AYCHS-2819 is Spin on Hot-temperature carbon Hardmask.
YCHS-4359
-Target : Thickness 0.59um
-Purpose of use : CIS device"
YCHE-3731
-Target : Thickness 0.31um
-Purpose of use : Mertal layer"
AYCHS-2819
-Target : Thickness 0.19um
-Purpose of use : CIS device"
YHS-140
-Target : Thickness 0.13um
-Purpose of use : Mertal layer"
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