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Transparent Photoresist
UV Imprint Resin
Stripper
LED
LCD
A Total of
8
hit(s)
Subject
Contents
Name
LED
This polymer material enables a response to a specific wavelength's light and specific patterns to be copied. It is also used in the exposure (lithography) process among the TFT-LCD circuit element processes.
PSS-Wafer-Foundry-Service
Forms micro patterns with a sharp shape at the upper part through plasma etching the sapphire wafer surface to improve the luminous efficiency of the LED.
YPS-3000
A material used to remove impurities that exist after the etch process.
YPS-1000
A material used to remove impurities that exist after the etch process.
DV-2379
As a material used in the last stage of the photo development process, the material is used for performing the process in which patterns are formed in the circuit by selectively removing the exposed and non-exposed areas.
YNP-4000L
In the mechanism of the photoresist composition, acid is formed from the photo acid generator that gets light from the exposure process. Also, the acid causes the resin's acid catalysed reaction in the photoresist. When using the negative photoresist, a bridging reaction occurs, and patterns are formed with solubility difference of the developer (development liquid) in the exposed area and non-exposed area through the reaction.
YPP-S10K
In the mechanism of the structure of the photoresist, acid is formed from the photo acid generator that gets light from the exposure process. Also, the acid causes the resin's acid catalysed reaction in the photoresist. An antiprotection reaction occurs in the positive photoresist composition, and patterns are formed with a solubility difference of the developer (developing liquid) in the exposed area and non-exposed area through the reaction.
YPP-3002
In the mechanism of the structure of the photoresist, acid is formed from the photo acid generator that gets light from the exposure process. Also, the acid causes the resin's acid catalysed reaction in the photoresist. An antiprotection reaction occurs in the positive photoresist composition, and patterns are formed with a solubility difference of the developer (developing liquid) in the exposed area and non-exposed area through the reaction.
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