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Semiconductor
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Semiconductor
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I-Line Photoresist
Bump Photoresist
KrF Photoresist
TSV Thick Photoresist
BARC
TARC
Developer
Etchant
Promoter
Rinsing Solution
Spin On Carbon Hardmask
CMP
Wafering
A Total of
2
hit(s)
Subject
Contents
Name
TARC
The even pattern can only be formed if the reflectivity is maintained at less than 1%, while the exposure process is being carried out by the reduction of the pattern size of the semiconductor element (Top Anti Reflective Coating). This is used to improve the reflective light and diffused reflection occurrence within the photoresist film during the pattern forming using lithography by treating the prevention film of reflection on the top part upon exposure.
YCTA-9047
-Environmentally safe; PFOS/PFOA issue free
-Low refractive index
-pH controllable
1
