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I-Line Photoresist
Bump Photoresist
KrF Photoresist
TSV Thick Photoresist
BARC
TARC
Developer
Etchant
Promoter
Rinsing Solution
Spin On Carbon Hardmask
CMP
Wafering
A Total of
8
hit(s)
Subject
Contents
Name
Spin On Carbon Hardmask
As the pattern size of a semiconductor element is reduced, if the thickness is reduced using the existing PR in implementing a pattern of less than 70nm, when the pattern is engraved at the depth required in the etch process, there is a possibility of the photoresist collapsing. To improve this, an SOC polymer is used. Although the pattern is engraved on the SOC polymer layer at the depth required for the each process using the photoresist, this can be used as a support material to prevent a photoresist collapse.
YS-210
-Target : Thickness 0.21um
-Purpose of use : Normal SOC
YGHS-178
-Target : Thickness 0.178um
-Purpose of use : Mertal layer
YCHS-3814
-Target : Thickness 0.14um
-Purpose of use : Planarization
YCHS-4359
-Target : Thickness 0.59um
-Purpose of use : CIS device
YCHE-3731
-Target : Thickness 0.31um
-Purpose of use : Mertal layer
AYCHS-2819
-Target : Thickness 0.19um
-Purpose of use : CIS device
YHS-140
-Target : Thickness 0.13um
-Purpose of use : Mertal layer
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