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I-Line Photoresist
Bump Photoresist
KrF Photoresist
TSV Thick Photoresist
BARC
TARC
Developer
Etchant
Promoter
Rinsing Solution
Spin On Carbon Hardmask
CMP
Wafering
A Total of
62
hit(s)
Subject
Contents
Name
YCBW-H609
Low selectivity of tungsten layer polishing for the purpose of effective tungsten surface buffing and scratch remove.
YCLW-S804
Tunable selective polishing slurry for the tungsten/oxide layer and minimum dishing.
YCHT-S902
High selective polishing slurry for bulk tungsten remove and minimum erosion.
SD-100
Polishing slurry for the Cu barrier metals layer remove accompanied by corrosion and scratch control.
YCHC-S711
High selective polishing slurry for bulk Cu remove accompanied by corrosion control.
NTS-300
-Polishing slurry for the multiple layer of SiO2/Poly/Nitride.
-Alternative of selective/non-selective polishing.
YS-210
-Target : Thickness 0.21um
-Purpose of use : Normal SOC
YGHS-178
-Target : Thickness 0.178um
-Purpose of use : Mertal layer
YCHS-3814
-Target : Thickness 0.14um
-Purpose of use : Planarization
YCHS-4359
-Target : Thickness 0.59um
-Purpose of use : CIS device
YCHE-3731
-Target : Thickness 0.31um
-Purpose of use : Mertal layer
AYCHS-2819
-Target : Thickness 0.19um
-Purpose of use : CIS device
YHS-140
-Target : Thickness 0.13um
-Purpose of use : Mertal layer
ALS-Y957
Improving the process margin by reducing the cap-leaning after etching
ERAC / AYCER series
-Target : Prevent collapse & Improvement of LER
-Purpose of use : EUV photoresist
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