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Semiconductor
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Semiconductor
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I-Line Photoresist
Bump Photoresist
KrF Photoresist
TSV Thick Photoresist
BARC
TARC
Developer
Etchant
Promoter
Rinsing Solution
Spin On Carbon Hardmask
CMP
Wafering
총
64
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이름
YA-400
(Bottom Anti Refective Coating Materials)
-Target : Thickness 0.04um
-Purpose of use : ArF BARC
YCB-240
(Bottom Anti Refective Coating Materials)
-Target : Thickness 0.024um
-Purpose of use : TSV package BARC – Ball grid array bumping process
YPP-T6K
(Positive PR TSV)
-Target : Thickness 6.0um (Res. 6.0um, Contact Hole)
-Purpose of use : i-Line Positive TSV Devices
YCKN-2954
(Negative PR for 248nm process)
-Target : Thickness 0.54um (Res. 180nm, 250nm)
-Purpose of use : Implant & Etch Layer
YCKN-4530
(Negative PR for 248nm process)
-Target : Thickness 0.30um (Res. 180nm)
-Purpose of use : Implant Layer
YKN-510
(Negative PR for 248nm process)
-Target : Thickness 0.54um (Res. 180nm, 250nm)
-Purpose of use : Implant & Etch Layer
YCKP-1654
(Positive PR for 248nm process)
-Target : Thickness 0.54um (Res. 180nm, 250nm)
-Purpose of use : Implant & Etch Layer
YKP-503
(Positive PR for 248nm process)
-Target : Thickness 0.54um (Res. 180nm, 250nm)
-Purpose of use : Implant & Etch Layer
YBNP-S500
(Negative type Bump Photoresist)
-Target : Thickness 50um (Res. 75um, Contact Hole)
-Purpose of use : Negative Bump Photoresist
YPP-6000
(Positive type Bump Photoresist)
-Target : Thickness 6.0um (Res. 5um, L/S 1:1)
-Purpose of use : Positive Bump Photoresist
YCIP-4000E
(Positive PR for 365nm process)
-Target : Thickness 3.5um (Res. 1.5um & 3.0um, 1:1)
-Purpose of use : Implant & Metal Layer
YCIP-1700
(Positive PR for 365nm process)
-Target : Thickness 1.7um (Res. 500nm, 1:1)
-Purpose of use : Implant & Etch Layer / OLED Devices
YCIP-1300
(Positive PR for 365nm process)
-Target : Thickness 1.3um (Res. 500nm, 1:1)
-Purpose of use : Implant & Etch Layer / OLED Devices
YCIP-1100
(Positive PR for 365nm process)
-Target : Thickness 1.1um (Res. 500nm, 1:1)
-Purpose of use : Implant & Etch Layer / OLED Devices
YCIN-2000/YCIN-6000
(Negative PR for 365nm process)
-Target : Thickness 2.0um ~ 6.0um (Bulk Pattern)
-Purpose of use : Implant & Etch Layer / OLED Devices
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